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HGTP10N40F1D - 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

HGTP10N40F1D_64660.PDF Datasheet


Part No.	HGTP10N40F1D HGTP10N50F1D
Description	10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
File Size	33.70K / 5 Page
Maker	INTERSIL[Intersil Corporation]
Homepage	http://www.intersil.com/cda/home/
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Full text search : 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

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PART	Description	Maker
IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 13A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 500MA I(D) \| TO-250VAR Rugged Series Power MOSFETs - N-Channel TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.75A I(D) \| TO-205AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 5.5A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 4.5A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 7.7A I(D) \| TO-247 TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 8.7A I(D) \| TO-247AC TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 10A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3.3A I(D) \| TO-220AB TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 5.5A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 4.5A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 4.5A I(D) \| TO-204AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 6.8A I(D) \| TO-247 晶体管\| MOSFET的\| N沟道\| 600V的五（巴西）直\| 6.8AI（四）\|47 TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 5.4A I(D) \| TO-204AA 晶体管\| MOSFET的\| N沟道\| 600V的五（巴西）直\| 5.4AI（四）\|04AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 4A I(D) \| TO-220AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 4A条（丁）\| TO - 220AB现有 TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 2.25A I(D) \| TO-205AF 晶体管\| MOSFET的\| N沟道\| 450V五（巴西）直\| 2.25AI（四）\|05AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 1.35A I(D) \| TO-205AF 晶体管\| MOSFET的\| N沟道\| 400V五（巴西）直\| 1.35AI（四）\|05AF TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 4A I(D) \| TO-204AA	International Rectifier, Corp. Intersil, Corp. Infineon Technologies AG Fairchild Semiconductor, Corp.
Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT	TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 200伏五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|600V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 12A条口T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 5A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 25A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 4A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|500V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 500V五（DRM）的\| 4A条口T）的有效值\|20 TRIAC\|400V V(DRM)\|3A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 3A条口（T）的有效值\|02 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 12A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 400V五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-218 可控硅\| 600V的五（DRM）的\| 40A条口（T）的有效值\|18 TRIAC\|800V V(DRM)\|12A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 12A条口（T）的有效值\|20 THYRISTOR MODULE\|TRIAC 晶闸管模块\|可控 TRIAC\|800V V(DRM)\|15A I(T)RMS\|TO-220 可控硅\| 800V的五（DRM）的\| 15A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|4A I(T)RMS\|TO-202 可控硅\| 400V五（DRM）的\| 4A条口（T）的有效值\|02 Transient Voltage Suppressor Diodes 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 600V的五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 200伏五（DRM）的\| 8A条口（T）的有效值\|20 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-220 可控硅\| 400V五（DRM）的\| 8A条口（T）的有效值\|20 Transient Voltage Suppressor Diodes 可控硅\| 700V的五（DRM）的\| 25A条口（T）的有效值\|20 可控硅\| 200伏五（DRM）的\| 10A条口（T）的有效值\|20 TRIAC\|300V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-39 TRIAC\|600V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|200V V(DRM)\|3A I(T)RMS\|TO-202 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|600V V(DRM)\|3A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|8A I(T)RMS\|TO-202 TRIAC\|800V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|PRESS-13 TRIAC\|500V V(DRM)\|15A I(T)RMS\|TO-3 TRIAC\|500V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|400V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|600V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|FBASE-R-HW30 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-208AA TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-203AA TRIAC\|200V V(DRM)\|20A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|200V V(DRM)\|40A I(T)RMS\|TO-218VAR TRIAC\|400V V(DRM)\|10A I(T)RMS\|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC\|400V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|500V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|200V V(DRM)\|25A I(T)RMS\|FBASE-R TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-220 TRIAC\|400V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|15A I(T)RMS\|TO-220 TRIAC\|500V V(DRM)\|8A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-208AA TRIAC\|400V V(DRM)\|40A I(T)RMS\|IST-3RT-1/4 TRIAC\|500V V(DRM)\|12A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|12A I(T)RMS\|TO-220AB TRIAC\|400V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|6A I(T)RMS\|TO-220 TRIAC\|700V V(DRM)\|40A I(T)RMS\|TO-218 TRIAC\|200V V(DRM)\|4A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|16A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|5A I(T)RMS\|TO-220 TRIAC\|200V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600V V(DRM)\|10A I(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|8AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|FBASE-R TRIAC\|600VV(DRM)\|25AI(T)RMS\|CAN TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-39 TRIAC\|800VV(DRM)\|25AI(T)RMS\|TO-220AB THYRISTORMODULE\|TRIAC TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220AB TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-220 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218 TRIAC\|600VV(DRM)\|25AI(T)RMS\|TO-218VAR TRIAC\|600VV(DRM)\|25AI(T)RMS\|PRESS-13 TRIAC\|200V V(DRM)\|25A I(T)RMS\|TO-220	Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
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